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National Repository of Grey Literature 2 records found  Search took 0.02 seconds. 
Luminescence of quantum dot heterostructures in applied electric field
 Kubištová, Jana ; Zíková, Markéta ; Kuldová, Karla ; Pangrác, Jiří ; Hospodková, Alice ; Hulicius, Eduard ; Petříček, Otto ; Oswald, Jiří
In this work, photoluminescence (PL) and electroluminescence (EL) of samples with InAs/GaAs quantum dots were measured with electric voltage or current applied on the structure. The EL structures emitting at 1300 nm were prepared by using n-type substrate. By applying the electric voltage in reverse bias on the sample, the evinced PL may be switched off - it decreases rapidly with the applied voltage and is negligible at about 10 V. Such structures which PL intensity is tunable by applied voltage have a broad spectrum of applications in optoelectronics.
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Velké objekty v MOVPE strukturách s InAs/GaAs kvantovými tečkami
 Samokhin, Jevgen ; Pangrác, Jiří ; Melichar, Karel ; Vavra, I. ; Jurek, Karel ; Mates, Tomáš ; Šimeček, Tomislav ; Hulicius, Eduard
The presence of large objects in MOVPE grown self-assembled quantum dot samples was studied. Creation of large objects and high indium concentration inside was explained as a combined process of accumulation of In atoms on the surface and their following long-range surface migration.
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